Boron nitride polymers:: Building blocks for organic electronic devices -: art. no. 125207

被引:32
作者
Côté, M [1 ]
Haynes, PD [1 ]
Molteni, C [1 ]
机构
[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
来源
PHYSICAL REVIEW B | 2001年 / 63卷 / 12期
关键词
D O I
10.1103/PhysRevB.63.125207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Modern electronic devices an increasingly being designed by combining materials with different electronic properties. The conventional semiconductor industry has achieved this by building heterostructures, such as quantum wells and superlattices, from materials with the same crystal structure but different constituent atoms. We propose that boron nitride polymers, with the same structure as organic polymers, will allow the same idea to be applied to polymer materials, already recognized as a cheap alternative to inorganic semiconductors. We demonstrate the similarity between organic polymers and their boron nitride analogues and then explore the potential innovations, including band gap tuning, that these new polymers could bring to organic polymer research.
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页数:4
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