Possibility of gamma-induced sensibilization process in rare-earth doped YAG crystals

被引：4

作者：

Kaczmarek, S

Matkovskii, AO

Mierczyk, Z

Kopczynski, K

Sugak, DY

Durygin, AN

Frukacz, Z

机构：

[1] INST ELECT MAT TECHNOL, PL-01919 WARSAW, POLAND

[2] UKRAINIAN ACAD SCI, INST PHYS, UA-252650 KIEV, UKRAINE

[3] SRC CARAT, R&D INST MAT, UA-290031 LVOV, UKRAINE

来源：

ACTA PHYSICA POLONICA A | 1996年 / 90卷 / 02期

关键词：

D O I：

10.12693/APhysPolA.90.285

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The influence of gamma irradiation of optical and lasing properties of Nd:YAG, Er:YAG and CTII:YAG single crystals was studied. The increase in optical output was established for rods without thermal annealing. The possible mechanisms of radiation sensibilization are discussed.

引用

页码：285 / 293

页数：9

共 19 条

[1]

ALPATEV AN, 1991, KVANTOVAYA ELEKTRON+, V18, P166

[2]

ASHUROV MK, 1985, DOKL AKAD NAUK SSSR+, V282, P1104

[3]

BAGDASAROV KS, 1977, KVANTOVAYA ELEKTRON+, V4, P1702

[4]

BIEDILOV MR, 1994, KVANTOVAYA ELEKTRON, V21, P1145

[5] LASER AND SPECTRAL PROPERTIES OF CR, TM, HO - YAG AT 2.1 MU-M [J].

BOWMAN, SR ;

WININGS, MJ ;

AUYEUNG, RCY ;

TUCKER, JE ;

SEARLES, SK ;

FELDMAN, BJ .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (09) :2142-2149

[6]

Frukacz Z, 1995, P SOC PHOTO-OPT INS, V2373, P74, DOI 10.1117/12.224932

[7]

FRUKACZ Z, 1993, OPTOELECTRON REV, V1, P117

[8]

FRUKACZ Z, 1994, MAT ELEKT, V22, P69

[9]

HABIBULAJEV PK, 1988, RADIATIONALLY ACTIVA, P316

[10]

JANKIWICZ Z, 1993, ELEKT, V3, P7

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