Growth and structure of nanometric iron oxide films

被引：8

作者：

Guiot, E ^{[1
]}

Gota, S ^{[1
]}

Henriot, M ^{[1
]}

Gautier-Soyer, M ^{[1
]}

Lefebvre, S ^{[1
]}

机构：

[1] CEA Saclay, DSM, DRECAM, SRSIM, F-91191 Gif Sur Yvette, France

来源：

APPLICATIONS OF SYNCHROTRON RADIATION TECHNIQUES TO MATERIALS SCIENCE IV | 1998年 / 524卷

关键词：

D O I：

10.1557/PROC-524-101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanometric films of iron oxides (Fe3O4, alpha and gamma Fe2O3) of high crystalline order and purity an epitaxially grown on alpha-Al2O3(0001) by atomic oxygen assisted MBE. A complete characterization of the films structure has been performed by in situ LEED and RHEED, and ex situ GIXRD using synchrotron radiation. The films grown at room temperature and post annealed at 400 degrees C and 700 degrees C (p(O2)=10(-6) Torr) are respectively metastable gamma-Fe2O3 (111) and alpha-Fe2O3 (0001). For a substrate temperature of 450 degrees C during growth, Fe3O4 (111) is directly obtained. GIXRD shows an in-plane expansion of the films, which decreases with thickness (0.8 and 0.2% for film thickness of 20 and 80 Angstrom, respectively).

引用

页码：101 / 107

页数：7