Temperature effect on the substrate selectivity of carbon nanotube growth in floating chemical vapor deposition

被引：38

作者：

Xiang, Rong

Luo, Guohua

Yang, Zhou

Zhang, Qiang

Qian, Weizhong

Wei, Fei ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Chem Engn, Beijing Key Lab Green Chem React Engn & Technol, Beijing 100084, Peoples R China

[2] Univ Tokyo, Dept Mech Engn, Tokyo 113, Japan

来源：

NANOTECHNOLOGY | 2007年 / 18卷 / 41期

关键词：

D O I：

10.1088/0957-4484/18/41/415703

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

An easy approach to control the carbon nanotube ( CNT) array selectivity on Si/ SiO2 in the floating chemical vapor deposition ( CVD) method by adjusting the operation temperature is demonstrated. Aligned CNTs can be obtained directly on Si using a standard procedure at a relatively low temperature. After analyzing the temperature influence on different substrates, an attempt to grow an ultra- long CNT forest at the optimized temperature and without any feedstock diffusion limitation is discussed.

引用

页数：4

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