Enhanced light extraction efficiency in pulse laser deposited Gd2O3:Eu3+ thin-film phosphors on 2-D PCLs

被引：17

作者：

Do, YR ^{[1
]}

Kim, YC

Shin, NS

Sohn, KS

机构：

[1] Kookmin Univ, Dept Chem, Seoul 136702, South Korea

[2] Samsung SDI Co Ltd, Ctr Corp Res & Dev, Kyeonggi Do 449902, South Korea

[3] Samsung SDI Co Ltd, Ctr Corp Res & Dev, Kyeonggi Do 449902, South Korea

[4] Sunchon Natl Univ, Dept Met Engn & Mat Sci, Choongnam 540742, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2005年 / 8卷 / 05期

关键词：

D O I：

10.1149/1.1887191

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Gd2O3: Eu3+ thin-film phosphors were pulse laser deposited on nanorod-type two-dimensional (2-D) photonic crystal layers (PCL) with 500 and 600 nm pitches as well as non-PCL substrates, in an attempt to improve the efficiency of light extraction. The extraction efficiency was also calculated based on the finite difference time-domain method. The PL efficiency of the phosphor deposited on the PCL with a 500 nm pitch was improved by a factor of 9.3. A comparison between Y2O3: Eu3+ and Gd2O3: Eu3+ revealed that when deposited on PCLs, Gd2O3: Eu3+ thin-film phosphors were more promising in terms of both intrinsic PL efficiency and light extraction. (C) 2005 The Electrochemical Society.

引用

页码：H43 / H45

页数：3

共 19 条

[1] Designed, highly-efficient FED phosphors and screens [J].