Magnetization reversal processes in exchange-biased spin-valve structures

被引:22
作者
Goodman, AM [1 ]
O'Grady, K
Laidler, H
Owen, NW
Portier, X
Petford-Long, AK
机构
[1] Univ Coll N Wales, Sch Elect Engn & Comp Syst, Magnet Mat Res Grp, Bangor LL57 1UT, Gwynedd, Wales
[2] Univ Oxford, Dept Mat, Oxford OX1 3PH, England
[3] UPM, TIEUIT Telecomun, Dept Fis Aplicada, Madrid 28031, Spain
关键词
exchange bias; FeMn; spin valve; thermal activation;
D O I
10.1109/20.914379
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper we provide an initial, qualitative description of the basic magnetization reversal processes that occur when a soft ferromagnetic layer is coupled to an antiferromagnet. We find that the magnetization reversal in the ferromagnetic layer adjacent to the antiferromagnet, i.e., the pinned layer, is dominated by thermal activation processes, We have developed, and report here, a model that accounts for seven distinct features of the magnetization curve of the pinned layer. The model is based upon the formation of domains in the antiferromagnetic layer whose growth is dominated by thermal activation processes. The thermal activation of these domain processes can result in shifts of the hysteresis loop in either direction, depending on the magnetic history of the sample and the rate of field sweep. In consequence, we call into question the current definition of the exchange field H-ex typically used to characterize such systems.
引用
收藏
页码:565 / 570
页数:6
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