Control of charging in resonant tunneling through InAs nanocrystal quantum dots

被引：43

作者：

Katz, D ^{[1
]}

Millo, O

Kan, SH

Banin, U

机构：

[1] Hebrew Univ Jerusalem, Racah Inst Phys, IL-91904 Jerusalem, Israel

[2] Hebrew Univ Jerusalem, Dept Phys Chem, IL-91904 Jerusalem, Israel

[3] Hebrew Univ Jerusalem, Farkas Ctr Light Induced Proc, IL-91904 Jerusalem, Israel

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 01期

关键词：

D O I：

10.1063/1.1382854

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunneling spectroscopy of InAs nanocrystals deposited on graphite was measured using scanning tunneling microscopy, in a double-barrier tunnel-junction configuration. The effect of the junction symmetry on the tunneling spectra is studied experimentally and modeled theoretically. When the tip is retracted, we observe resonant tunneling through the nanocrystal states without charging. Charging is regained upon reducing the tip-nanocrystal distance, making the junction more symmetric. The effect of voltage distribution between the junctions on the measured spectra is also discussed. (C) 2001 American Institute of Physics.

引用

页码：117 / 119

页数：3

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