Development of pressure control technique of an arc-submerged nanoparticle synthesis system (ASNSS) for copper nanoparticle fabrication

被引:29
作者
Tsung, TT
Chang, H [1 ]
Chen, LC
Han, LL
Lo, CH
Liu, MK
机构
[1] Natl Taipei Univ Technol, Dept Engn Mech, Taipei 10608, Taiwan
[2] Natl Taipei Univ Technol, Inst Automat Technol, Taipei 10608, Taiwan
关键词
nanoparticle manufacturing; pressure control; cuprum nanoparticles; submerged arc;
D O I
10.2320/matertrans.44.1138
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The synthesis of nano-materials is one of the crucial techniques towards product and process innovation. In this article, low-pressure control methods for an arc-submerged nanoparticle synthesis system (ASNSS) was proposed and developed for copper nanoparticle fabrication. Two technical advances associated with nanoparticle synthesis were achieved. One is the novel pressure control technique developed for nanoparticle fabrication. The other is the verification that the constant low-operating pressure plays an important role in determining the characteristics of the prepared nanoparticles. From the experimental results, pressure control of the ASNSS was identified as crucial to success of metal nanoparticle synthesis. To achieve the desired pressure control, a vacuum chamber was developed as a nanoparticle accumulator and low-pressure reservoir. The chamber was controlled by the proposed flow-valve feedback control system and integrated with the ASNSS. In this study, the pressure control equipment of the ASNSS was effectively developed to prepare desired copper nanocrystalline particles with well-controlled size.
引用
收藏
页码:1138 / 1142
页数:5
相关论文
共 10 条
[1]  
CHANG H, 2002, 6 INT C NAN MAT VIB, P360
[2]  
DARYL D, 1989, J APPL PHYS, V66, P4095
[3]  
FRIEDLANDER SK, 1977, SMOKE DUST HAZE FUND, P25
[5]  
Lee T.C., 1991, MAT MANUFACTURING PR, V6, P635
[6]   THEORETICAL-MODELS OF THE ELECTRICAL-DISCHARGE MACHINING PROCESS .2. THE ANODE EROSION MODEL [J].
PATEL, MR ;
BARRUFET, MA ;
EUBANK, PT ;
DIBITONTO, DD .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (09) :4104-4111
[7]  
PHILIP TE, 1993, J APPL PHYS, V73, P7900
[8]  
SEIGEL RW, 1994, NANOPHASE MAT SYNTHE, P29
[9]  
SIVARAM A, 2001, APPL PHYS LETT, V78, P610
[10]  
TSUNG TT, 2002, 6 INT C NAN MAT PC3, P295