A 2-D velocity- and direction-selective sensor with BJT-based silicon retina and temporal zero-crossing detector

被引:31
作者
Jiang, HC [1 ]
Wu, CY
机构
[1] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan
[2] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
关键词
bipolar junction transistor (BJT)-based silicon; retina; CMOS motion-selective sensor; current-input edge extractor; direction-selective sensing; temporal zero-crossings; velocity-selective sensing;
D O I
10.1109/4.743787
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a 2-D velocity- and direction-selective visual motion sensor with a bipolar junction transistor (BJT)-based silicon retina and temporal zero-crossing detector is proposed and implemented. In the proposed sensor, a token-based delay-and-correlate computational algorithm is adopted to detect the selected speed and direction of moving object images. Moreover, binary pulsed signals are used as correlative signals to increase the velocity and direction selectivities, Each basic detection cell in the sensor has a compact architecture, which consists of one BJT-based silicon retina cell, one current-input edge extractor, two delay paths, and four correlators, Using the proposed architecture, an experimental 32 x 32 visual motion sensor chip with a cell size of 100 x 100 mu m(2) has been designed and fabricated by using 0.6-mu m CMOS technology. The correct operations of the fabricated sensor chip have been verified through measurements. The measured ranges of selectively detected velocity and direction in the fabricated sensor chip are 56 mm/s-5 m/s and 0-360 degrees, respectively. The complete sensor system consumes 20 mW at 5 V.
引用
收藏
页码:241 / 247
页数:7
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