Unstable growth on rough surfaces

被引:49
作者
Gyure, MF
Zinck, JJ
Ratsch, C
Vvedensky, DD
机构
[1] HRL Labs LLC, Malibu, CA 90265 USA
[2] Univ Calif Los Angeles, Dept Math, Los Angeles, CA 90095 USA
关键词
D O I
10.1103/PhysRevLett.81.4931
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present experimental data for the morphological evolution of InAs buffer layers which are interpreted using continuum equations of motion and kinetic Monte Carlo simulations. Our analysis reveals the presence of an instability even as an initially rough surface smooths during growth. This instability is due to the step-edge barrier and causes a characteristic length to emerge while the surface roughness is decreasing, well before the formation of the mounds. The smoothing is well described by a linear continuum equation identical to that which describes the early stages of spinodal decomposition and has important practical implications for the growth of device buffer layers. [S0031-9007(98)07810-7].
引用
收藏
页码:4931 / 4934
页数:4
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