Phase stability for the in situ growth of Nd1+xBa2-xCu3Oy films using pulsed-laser deposition

被引：35

作者：

Cantoni, C ^{[1
]}

Norton, DP

Kroeger, DM

Paranthaman, M

Christen, DK

Verebelyi, D

Feenstra, R

Lee, DF

Specht, ED

Boffa, V

Pace, S

机构：

[1] Oak Ridge Natl Lab, Oak Ridge, TN 37831 USA

[2] Ctr Ric Enea Frascati, I-00044 Rome, Italy

[3] Univ Salerno, I-84081 Salerno, Italy

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 01期

关键词：

D O I：

10.1063/1.123162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have determined the stability line in the 1/T-log[P(O-2)] phase space for the synthesis of Nd1-xBa2-xCu3Oy (NdBCO) films. A systematic study of T-c, J(c), and rho(T) dependence on oxygen partial pressure and temperature for the deposition of thin NdBCO films grown by pulsed-laser deposition was performed. The conditions for optimal NdBCO film growth were determined by varying oxygen partial pressure from 0.02 to 400 mTorr, and substrate temperature between 730 and 800 degrees C. The results show that the best NdBCO films are obtained at oxygen pressures in the range of 0.2-1.2 mTorr, depending on the substrate temperature. This is more than two orders-of-magnitude lower than the correspondent oxygen pressure appropriate for YBa2Cu3O7-delta film growth. (C) 1999 American Institute of Physics. [S0003-6951(99)00201-6].

引用

页码：96 / 98

页数：3

共 22 条

[1] Superior properties of NdBa(2)Cu(3)Oy over YBa2Cu3Ox thin films [J].