Effects of strain field in nitrogen-mediated Co film growth on Cu(001): Segregation and electronic structure change

被引：18

作者：

Sekiba, D ^{[1
]}

Doi, S ^{[1
]}

Nakatsuji, K ^{[1
]}

Komori, F ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

来源：

SURFACE SCIENCE | 2005年 / 590卷 / 2-3期

关键词：

models of surface kinetics; low energy electron diffraction (LEED); ion implantation methods; X-ray photoelectron spectroscopy; scanning tunneling microscopy; epitaxy; growth; nanopatterning; surface segregation; surface stress; surface tension; cobalt; copper; nitrogen atom; thin film structures; metal-metal interface; metal-metal magnetic thin film structures;

D O I：

10.1016/j.susc.2005.05.067

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Growth modes of Co thin films on the both N-saturated and partially N-adsorbed Cu(001) surfaces are studied in detail. From results of the STM and XPS measurements, segregation of N atoms depending on the Co island size is concluded. This new type of atom segregation is explained by means of a lattice strain of the substrate due to the small Co island formation. A novel core-level shift of N I s during the Co film growth is also reported. A possible influence of the lattice strain to the electronic structure of the surfactant is discussed. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：138 / 145

页数：8

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