Electrodeposition and characterization of ZnSe semiconductor thin films

被引:112
作者
Riveros, G
Gómez, H
Henríquez, R
Schrebler, R
Marotti, RE
Dalchiele, EA
机构
[1] Pontificia Univ Catolica Valparaiso, Inst Quim, Valparaiso 2950, Chile
[2] Fac Ingn, Inst Fis, Montevideo 11000, Uruguay
关键词
electrodeposition; ZnSe; optical reflectance; X-ray diffraction;
D O I
10.1016/S0927-0248(01)00066-6
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
In this work, results on the preparation and characterization of ZnSe thin films obtained by electrodeposition are presented. Voltammetric curves were recorded in order to characterize the electrochemical behavior of the Zn+2/SeO2 system on different substrates. Thin films were deposited potentiostatically from an unstirred, deareated aqueous solution onto titanium, glass substrates coated with fluorine doped tin oxide and ITO glass substrates. The effect of main parameters such as the deposition potential, SeO2 concentration and annealing on film composition and structure were analyzed. The as-grown and treated layers were characterized by X-ray energy dispersive analysis, X-ray diffraction, scanning electron microscopy and photoelectrochemical studies. Optical measurements were done on these samples which gave a clear band edge near 2.6eV quite close to the accepted room temperature value of 2.7eV for ZnSe. (C) 2001 Elsevier Science BN. All rights reserved.
引用
收藏
页码:255 / 268
页数:14
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