A self-assembled single-electron tunneling device

被引:8
作者
Persson, SHM [1 ]
Olofsson, L
Hedberg, L
Sutherland, D
Olsson, E
机构
[1] Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden
[2] Chalmers Univ Technol, Dept Appl Phys, S-41296 Gothenburg, Sweden
[3] Chalmers Univ Technol, Dept Microwave Technol, S-41296 Gothenburg, Sweden
[4] Gothenburg Univ, S-41296 Gothenburg, Sweden
来源
MOLECULAR ELECTRONICS: SCIENCE AND TECHNOLOGY | 1998年 / 852卷
关键词
D O I
10.1111/j.1749-6632.1998.tb09872.x
中图分类号
R318 [生物医学工程];
学科分类号
0831 ;
摘要
Single-electron tunneling devices were made by self-assembly of colloidal ligand-stabilized gold clusters in the small gap between two gold electrodes, which were covered with a self-assembled monolayer of 1,8-octanedithiol. With this method we control the size of the active part of the device which is smaller than the traditional lithographic resolution, with chemical methods and use self-positioning of the particle by weak forces between the substrate and the particle. The current voltage characteristic of the devices exhibit a Coulomb staircase and gate effect at 4.2 K, and a prominent Coulomb blockade at room temperature.
引用
收藏
页码:188 / 196
页数:9
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