Field emission from nitrogen doped tetrahedral amorphous carbon prepared by filtered cathodic vacuum are technique

被引:20
作者
Cheah, LK [1 ]
Shi, X [1 ]
Tay, BK [1 ]
Sun, Z [1 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ion Beam Proc Lab, Singapore 639798, Singapore
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 04期
关键词
D O I
10.1116/1.590127
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A study of field emission from nitrogen doped tetrahedral amorphous' carbon (ta-C:N) films prepared by the filtered cathodic vacuum are (FCVA) deposition technique is reported. Field emission from ta-C:N films deposited on Si substrates was investigated in a diode configuration at room temperature and base pressure of 2.0 X 10(-6) Torr. The J-E curves shift significantly towards the low potential side with increasing nitrogen concentration. The lowest field at which field emission was obtained was 10 V mu m(-1). A current density of 0.1 mA mm(-2) (assuming the entire film surface is emitting) at 50 V mu m(-1) was obtained from these films. Electronic parameters, i.e., the band gap energy and activation energy were measured in order to construct an energy band dial:ram for the heterojunction structure, and the field emission mechanism is proposed based on this structure. (C) 1998 American Vacuum Society.
引用
收藏
页码:2049 / 2051
页数:3
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