Microstructures and optical properties in crystallized a-Si:H multi-quantum wells using excimer laser annealing

被引：23

作者：

Huang, XF ^{[1
]}

Li, ZF ^{[1
]}

Wu, W ^{[1
]}

Chen, KJ ^{[1
]}

Chen, XY ^{[1
]}

Liu, ZG ^{[1
]}

机构：

[1] CTR ADV STUDIES SCI & TECHNOL MICROSTRUCT, NANJING 210093, PEOPLES R CHINA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1996年 / 198卷

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0022-3093(96)00046-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The visible light emission from KrF excimer laser crystallized a-Si:H/a-SiNx:H multi-quantum well (MQW) films at room temperature is reported. Both X-ray diffraction (XRD) and Raman scattering spectra provide evidence for the crystallization of Si layers within the MQWs after laser annealing treatment. Transmission electron micrographs (TEM) show the perfect conservation of the layered structures and proves the mechanism of constrained crystallization by stable a-SiNx:H barrier layers during laser annealing. The peak wavelength of visible PL spectra of the crystallized samples is around 640 nm (similar to 1.94 eV) and does not shift with different exposure energy. The FWHM of the PL peak becomes narrower to 0.4 eV when the irradiation energy density is increased to 0.9 J/cm(2).

引用

页码：821 / 824

页数：4

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