Deposition mechanism of sputtered amorphous carbon nitride thin film

被引:15
作者
Durand-Drouhin, O [1 ]
Benlahsen, M [1 ]
Clin, M [1 ]
Bouzerar, R [1 ]
机构
[1] Fac Sci Amiens, Phys Mat Condensee Lab, F-80039 Amiens 2, France
关键词
disordered systems; surface and interfaces; thin films; atom; molecule; ion impact;
D O I
10.1016/j.apsusc.2003.09.017
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report in this study a deposition mechanism that describes the interaction of plasma species with the growing amorphous carbon nitride film (a-CNx). The samples were deposited by radio frequency (rf) magnetron sputtering on crystalline silicon, under different values of RF power. Plasma characterisation was performed using mass spectroscopy (MS) and the influence of the process parameters on the chemical fragmentation of species, present in the plasma, was investigated. Nitrogen incorporation in the a-CNx films was analyzed using nuclear reaction analysis (NRA) measurements correlated with Fourier transform infrared spectroscopy (FTIR) results. The deposition mechanism proposed in this work can well describe surface processes and the resulting composition and chemical bonding of the deposited a-CNx films. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码:269 / 274
页数:6
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