Rapid default transition of CD4 T cell effectors to functional memory cells

被引:84
作者
McKinstry, K. Kai
Golech, Susanne
Lee, Won-Ha
Huston, Gail
Weng, Nan-Ping
Swain, Susan L.
机构
[1] Trudeau Inst Inc, Saranac Lake, NY 12983 USA
[2] NIA, NIH, Baltimore, MD 21224 USA
关键词
D O I
10.1084/jem.20070041
中图分类号
R392 [医学免疫学]; Q939.91 [免疫学];
学科分类号
100102 ;
摘要
The majority of highly activated CD4 T cell effectors die after antigen clearance, but a small number revert to a resting state, becoming memory cells with unique functional attributes. It is currently unclear when after antigen clearance effectors return to rest and acquire important memory properties. We follow well-defined cohorts of CD4 T cells through the effector-to-memory transition by analyzing phenotype, important functional properties, and gene expression profiles. We find that the transition from effector to memory is rapid in that effectors rested for only 3 d closely resemble canonical memory cells rested for 60 d or longer in the absence of antigen. This is true for both Th1 and Th2 lineages, and occurs whether CD4 T cell effectors rest in vivo or in vitro, suggesting a default pathway. We find that the effector -memory transition at the level of gene expression occurs in two stages: a rapid loss of expression of a myriad of effector-associated genes, and a more gradual gain of expression of a cohort of genes uniquely associated with memory cells rested for extended periods.
引用
收藏
页码:2199 / 2211
页数:13
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