Carrier doping effects on copper 2p core level photoemission in cuprates

被引:15
作者
Okada, K
Kotani, A
机构
[1] Okayama Univ, Grad Sch Nat Sci & Technol, Okayama, Japan
[2] RIKEN, Sayo, Hyogo 6795148, Japan
[3] High Energy Accelerator Res Org, Photon Factory, IMSS, Tsukuba, Ibaraki 3050801, Japan
关键词
Cu 2p XPS; angle-resolved photoemission; cuprate; Zhang-Rice singlet; electron correlation; charge transfer; doping;
D O I
10.1143/JPSJ.74.653
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Carrier doping effects on the Cu 2p photoemission in low-dimensional cuprates are discussed on the basis of large-cluster model calculations. The result shows that the carrier doping causes a significant change in the line shape of the main structure in the Cu 2p spectrum. It is closely related to the change in the electronic structure near the Fermi energy of the system.
引用
收藏
页码:653 / 660
页数:8
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