Adsorption structure and silicide formation of Ba on the Si(001) surface

被引：28

作者：

Takeda, Y ^{[1
]}

Urano, T ^{[1
]}

Ohtani, T ^{[1
]}

Tamiya, K ^{[1
]}

Hongo, S ^{[1
]}

机构：

[1] Kobe Univ, Fac Engn, Nada Ku, Kobe, Hyogo 6578501, Japan

来源：

SURFACE SCIENCE | 1998年 / 402卷 / 1-3期

关键词：

barium; low energy electron diffraction (LEED); metal-semiconductor interfaces; silicide; vicinal single crystal surfaces;

D O I：

10.1016/S0039-6028(97)00951-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The behaviour of Ba atoms on the Si(001) surface was investigated by low-energy electron diffraction (LEED). An epitaxial silicide formation was observed for surfaces obtained both by deposition onto a substrate kept at 700 degrees C and by annealing at 600 degrees C after deposition at room temperature. These surfaces show [GRAPHICS] and [GRAPHICS] oblique patterns which have a unit cell close to six times and three times, respectively, as large as that of the BaSi2(111) surface. In addition to the (2 x 3), (2 x 1) and (2 x 4) structures at submonolayer coverage, a c(2 x 6) pattern was found. The two-fold periodicities of the (2 x 4) and (2 x 3) superstructures were determined to be parallel to the dimer direction using a single-domain Si(001)-(2 x 1) substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：692 / 696

页数：5

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