Multiphonon photoluminescence and Raman scattering in semiconductor quantum dots

被引:15
作者
Fomin, VM
Pokatilov, EP
Devreese, JT
Klimin, SN
Gladilin, VN
Balaban, SN
机构
[1] Univ Instelling Antwerp, Dept Nat Kunde, B-2610 Wilrijk, Belgium
[2] State Univ Moldova, Dept Theoret Phys, Lab Multilayer Struct Phys, MD-2009 Kishinev, Moldova
关键词
D O I
10.1016/S0038-1101(98)00022-7
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Multiphonon optical spectra of semiconductor quantum dots, in particular, of nanocrystals with structure imperfections, are studied in the framework of a non-adiabatic approach. The phonon modes and the amplitudes of the electron-phonon interaction are found taking into account both electrostatic and mechanical boundary conditions, as well as the finite number of vibrational degrees of freedom in quantum dots. Selection rules for Raman scattering are deduced for quantum dots of semiconductor materials with a degenerate valence band. The effects of non-adiabaticity of the exciton-phonon system are shown to lead to a significant enhancement of phonon-assisted transition probabilities and to a substantial difference of the optical spectra from the Franck-Condon progression. Calculated optical spectra compare well with experimental data on photoluminescence and Raman scattering in CdSe and PbS quantum dots. (C) 1998 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1309 / 1314
页数:6
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