Effect of mesoscale crystalline structure on the field-effect mobility of regioregular poly(3-hexyl thiophene) in thin-film transistors

被引:545
作者
Yang, HC [1 ]
Shin, TJ
Yang, L
Cho, K
Ryu, CY
Bao, ZN
机构
[1] Rensselaer Polytech Inst, Rensselaer Nanotechnol Ctr, Troy, NY 12180 USA
[2] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[3] Brookhaven Natl Lab, Natl Synchroton Light Source, Upton, NY 11973 USA
[4] Univ Sci & Technol, Dept Chem Engn, Pohang 790784, South Korea
关键词
D O I
10.1002/adfm.200400297
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Regioregular poly(3-hexyl thiophene) (RR P3HT) is drop-cast to fabricate field-effect transistor (FET) devices from different solvents with different boiling points and solubilities for RR P3HT, such as methylene chloride, toluene, tetrahydrofuran, and chloroform. A Petri dish is used to cover the solution, and it takes less than 30 min for the solvents to evaporate at room temperature. The mesoscale crystalline morphology of RR P3HT thin films can be manipulated from well-dispersed nanofibrils to well-developed spherulites by changing solution processing conditions. The morphological correlation with the charge-carrier mobility in RR P3HT thin-film transistor (TFT) devices is investigated. The TFT devices show charge-carrier mobilities in the range of 10(-4) similar to 10(-2) cm(2) V-1 s(-1) depending on the solvent used, although grazing-incidence X-ray diffraction (GIXD) reveals that all films develop the same pi-pi-stacking orientation, where the < 100 >-axis is normal to the polymer films. By combining results from atomic force microscopy (AFM) and GIXD, it is found that the morphological connectivity of crystalline nanofibrils and the < 100 >-axis orientation distribution of the pi-pi-stacking plane with respect to the film normal play important roles on the charge-carrier mobility of RR P3HT for TFT applications.
引用
收藏
页码:671 / 676
页数:6
相关论文
共 39 条
  • [1] [Anonymous], UNPUB
  • [2] FIELD-EFFECT MOBILITY OF POLY(3-HEXYLTHIOPHENE)
    ASSADI, A
    SVENSSON, C
    WILLANDER, M
    INGANAS, O
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (03) : 195 - 197
  • [3] Soluble and processable regioregular poly(3-hexylthiophene) for thin film field-effect transistor applications with high mobility
    Bao, Z
    Dodabalapur, A
    Lovinger, AJ
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (26) : 4108 - 4110
  • [4] High-performance plastic transistors fabricated by printing techniques
    Bao, ZN
    Feng, Y
    Dodabalapur, A
    Raju, VR
    Lovinger, AJ
    [J]. CHEMISTRY OF MATERIALS, 1997, 9 (06) : 1299 - &
  • [5] Beljonne D, 2001, ADV FUNCT MATER, V11, P229, DOI 10.1002/1616-3028(200106)11:3<229::AID-ADFM229>3.0.CO
  • [6] 2-L
  • [7] LOGIC GATES MADE FROM POLYMER TRANSISTORS AND THEIR USE IN RING OSCILLATORS
    BROWN, AR
    POMP, A
    HART, CM
    DELEEUW, DM
    [J]. SCIENCE, 1995, 270 (5238) : 972 - 974
  • [8] Enhanced mobility of poly(3-hexylthiophene) transistors by spin-coating from high-boiling-point solvents
    Chang, JF
    Sun, BQ
    Breiby, DW
    Nielsen, MM
    Sölling, TI
    Giles, M
    McCulloch, I
    Sirringhaus, H
    [J]. CHEMISTRY OF MATERIALS, 2004, 16 (23) : 4772 - 4776
  • [9] KINETICS OF MESOPHASE TRANSITIONS IN THERMOTROPIC COPOLYESTERS .1. CALORIMETRIC STUDY
    CHENG, SZD
    [J]. MACROMOLECULES, 1988, 21 (08) : 2475 - 2484
  • [10] MODIFICATION OF THE AVRAMI TREATMENT OF CRYSTALLIZATION TO ACCOUNT FOR NUCLEUS AND INTERFACE
    CHENG, SZD
    WUNDERLICH, B
    [J]. MACROMOLECULES, 1988, 21 (11) : 3327 - 3328