Photoluminescence of isotopically purified silicon: How sharp are bound exciton transitions?

被引：67

作者：

Karaiskaj, D ^{[1
]}

Thewalt, MLW

Ruf, T

Cardona, M

Pohl, HJ

Deviatych, GG

Sennikov, PG

Riemann, H

机构：

[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

[2] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany

[3] VITCON Projectsonsult GMBH, D-07745 Jena, Germany

[4] Russian Acad Sci, Inst Chem Highly Pure Subst, Nizhnii Novgorod 603600, Russia

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 86卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.86.6010

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the first high resolution photoluminescence studies of isotopically pure Si (99.896% Si-28). New information is obtained on isotopic effects on the indirect band gap energy, phonon energies, and phonon broadenings, which is in good agreement with calculations and previous results obtained in Ge and diamond. Remarkably, the linewidths of the no-phonon boron and phosphorus bound exciton transitions in the Si-28 Sample are much narrower than in natural Si and are not well resolved at our maximum instrumental resolution of similar to0.014 cm(-1). The removal of the dominant broadening resulting from isotopic randomness in natural Si reveals new fine structure in the boron bound exciton luminescence.

引用

页码：6010 / 6013

页数：4

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