Dense electronic excitation induced defects in fused silica

被引：32

作者：

Mohanty, T ^{[1
]}

Mishra, NC

Bhat, SV

Basu, PK

Kanjilal, D

机构：

[1] Aruna Asaf Ali Marg, Ctr Nucl Sci, New Delhi 110067, India

[2] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India

[3] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

[4] Solid State Phys Lab, Delhi 110054, India

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2003年 / 36卷 / 24期

关键词：

D O I：

10.1088/0022-3727/36/24/010

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Investigation of defects created in optical grade fused silica due to 200 MeV silver ion irradiation is reported. Paramagnetically positively charged oxygen vacancies or neutral dangling Si bonds (E' centres), non-bridging oxygen hole centres (NBOHC) and non-paramagnetic defects like B-2 bands are observed. The fluence dependent optical and paramagnetic behaviours of these defects are studied using UV-visible absorption spectroscopy, photoluminescence spectroscopy, infrared (IR) absorption and electron paramagnetic resonance. It is observed that generation of E' centres, NBOHC and B-2 bands gets saturated beyond a fluence of 1 x 10(12) ions cm(-2). IR spectra showing saturation in transmission at this fluence also support this observation. At this fluence samples get fully covered with latent tracks containing these defects.

引用

页码：3151 / 3155

页数：5

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