Effects of Cu from ZnTe:Cu contacts in CdS/CdTe cells

被引：17

作者：

Gessert, TA ^{[1
]}

Duda, A ^{[1
]}

Asher, SE ^{[1
]}

Narayanswamy, C ^{[1
]}

Rose, D ^{[1
]}

机构：

[1] NREL, Golden, CO 80401 USA

来源：

CONFERENCE RECORD OF THE TWENTY-EIGHTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2000 | 2000年

关键词：

D O I：

10.1109/PVSC.2000.915929

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

CdS/CdTe devices processed with ZnTe:Cu/Ti back contacts are studied as a function of contact deposition temperature between similar to 200 degreesC and similar to 400 degreesC. Both the open-circuit voltage (V-oc) and fill factor (FF) increase with temperature. High-resolution secondary ion mass spectroscopy shows Cu concentration in the CdTe region increases due to CdCl2 treatment, whereas Cu concentration in the CdS region increases with deposition temperature. Measurements of specific contact resistance suggest that Cu diffusing from the contact interface significantly increases the specific contact resistance at the ZnTe:Cu/Ti interface, resulting in an interface with dominant resistance loss.

引用

页码：654 / 657

页数：4

共 9 条

[1]

ASHER SE, P 28 PHOT SPEC C

[2] CONTACT RESISTANCE AND CONTACT RESISTIVITY [J].