Optical gain and stimulated emission of cleaved cubic gallium nitrite

被引：10

作者：

Holst, J ^{[1
]}

Hoffmann, A

Broser, I

Schöttker, B

As, DJ

Schikora, D

Lischka, K

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Univ Gesamthsch Paderborn, FB Phys 6, D-33095 Paderborn, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 14期

关键词：

D O I：

10.1063/1.123715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report on the observation of optically excited stimulated emission of c-GaN layers grown by molecular-beam epitaxy (MBE). Stimulated emission was observed at 1.8 K and room temperature. The threshold intensity for excitation of stimulated emission from our MBE-grown c-GaN layers is significantly lower than that reported for c-GaN grown by metalorganic chemical vapor deposition (MOCVD). The experimental data of optical gain and stimulated emission presented in this letter demonstrate that this material has a good potential for the future realization of cleaved cavity blue light-emitting laser diodes. (C) 1999 American Institute of Physics. [S0003-6951(99)02713-8].

引用

页码：1966 / 1968

页数：3

共 20 条

[1] The near band edge photoluminescence of cubic GaN epilayers [J].

As, DJ ;

Schmilgus, F ;

Wang, C ;

Schottker, B ;

Schikora, D ;

Lischka, K .

APPLIED PHYSICS LETTERS, 1997, 70 (10) :1311-1313

[2] Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC [J].

Bulman, GE ;

Doverspike, K ;

Sheppard, ST ;

Weeks, TW ;

Kong, HS ;

Dieringer, HM ;

Edmond, JA ;

Brown, JD ;

Swindell, JT ;

Schetzina, JF .

ELECTRONICS LETTERS, 1997, 33 (18) :1556-1557

[3] SELECTIVE GROWTH OF ZINCBLENDE, WURTZITE, OR A MIXED-PHASE OF GALLIUM NITRIDE BY MOLECULAR-BEAM EPITAXY [J].

CHENG, TS ;

JENKINS, LC ;

HOOPER, SE ;

FOXON, CT ;

ORTON, JW ;

LACKLISON, DE .

APPLIED PHYSICS LETTERS, 1995, 66 (12) :1509-1511

[4] Mechanisms of optical gain in cubic gallium nitrite [J].

Holst, J ;

Eckey, L ;

Hoffmann, A ;

Broser, I ;

Schottker, B ;

As, DJ ;

Schikora, D ;

Lischka, K .

APPLIED PHYSICS LETTERS, 1998, 72 (12) :1439-1441

[5]

Holst JC, 1997, MRS INTERNET J N S R, V2, part. no.

[6] Optical gain in optically pumped cubic GaN at room temperature [J].

Klann, R ;

Brandt, O ;

Yang, H ;

Grahn, HT ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 1997, 70 (09) :1076-1077

[7] EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZINCBLENDE GALLIUM NITRIDE ON (001) SILICON [J].

LEI, T ;

MOUSTAKAS, TD ;

GRAHAM, RJ ;

HE, Y ;

BERKOWITZ, SJ .

JOURNAL OF APPLIED PHYSICS, 1992, 71 (10) :4933-4943

[8] GROWTH OF ZINC BLENDE-GAN ON BETA-SIC COATED (001) SI BY MOLECULAR-BEAM EPITAXY USING A RADIO-FREQUENCY PLASMA DISCHARGE, NITROGEN FREE-RADICAL SOURCE [J].

LIU, H ;

FRENKEL, AC ;

KIM, JG ;

PARK, RM .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (10) :6124-6127

[9] Metalorganic vapor-phase epitaxy of cubic AlxGa10xN alloy on a GaAs (100) substrate [J].

Nakadaira, A ;

Tanaka, H .

APPLIED PHYSICS LETTERS, 1997, 70 (20) :2720-2722

[10] Stimulated emission at 34 K from an optically pumped cubic GaN/AlGaN heterostructure grown by metalorganic vapor-phase epitaxy [J].

Nakadaira, A ;

Tanaka, H .

APPLIED PHYSICS LETTERS, 1997, 71 (06) :812-814

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