Electron-stimulated desorption of hydrogen from H/Si(001)-1x1 surface studied by time-of-flight elastic recoil detection analysis

被引：27

作者：

Fuse, T ^{[1
]}

Fujino, T ^{[1
]}

Ryu, JT ^{[1
]}

Katayama, M ^{[1
]}

Oura, K ^{[1
]}

机构：

[1] Osaka Univ, Fac Engn, Dept Elect Engn, Osaka 5650871, Japan

来源：

SURFACE SCIENCE | 1999年 / 420卷 / 01期

关键词：

electron-solid interactions; scattering; diffraction; electron-stimulated desorption (ESD); hydrogen; ion scattering spectroscopy; low energy ion scattering (LEIS); silicon;

D O I：

10.1016/S0039-6028(98)00827-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have performed elastic recoil detection analysis with time-of-flight detection (TOF-ERDA) to investigate the hydrogen desorption cross-section of electron-stimulated desorption (ESD). We confirmed that the TOF-ERDA measurement was valid for quantitative analysis of surface hydrogen in spite of the use of a low-energy ion beam. The desorption cross-section for the H/Si(001)-1 x 1 surface was determined for incident electron energy range of 25-200 eV. It was found that threshold electron energy of ESD was about 23 eV. The detailed feature of the electron energy dependence of the ESD cross section provided the formation on the mechanism of ESD, which was related to the core band excitation. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：81 / 86

页数：6

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