Thermoelectric properties of p-type antimony bismuth telluride alloys prepared by cold pressing

被引：141

作者：

Navratil, J ^{[1
]}

Stary, Z ^{[1
]}

Plechacek, T ^{[1
]}

机构：

[1] UNIV PARDUBICE, PARDUBICE 53009, CZECH REPUBLIC

来源：

MATERIALS RESEARCH BULLETIN | 1996年 / 31卷 / 12期

关键词：

layered compounds; semiconductors; defects; electrical properties;

D O I：

10.1016/S0025-5408(96)00149-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sb2-xBixTe3 (x = 0.43-0.51) thermoelectric materials were prepared by the powder metallurgy method. The effects of grinding and sintering processes on the Seebeck coefficient, electrical conductivity, and thermoelectric figure of merit were investigated. For different particle sizes, a shift in maximum of Z = f(x) dependence was found. This shift can be explained by the presence of point defects and their interaction. Cold-pressed material with Z similar to 3.1 x 10(-3) K-1 was prepared.

引用

页码：1559 / 1566

页数：8