Electrical properties of the Cu(In,Ga)Se2/MoSe2/Mo structure

被引：170

作者：

Kohara, N

Nishiwaki, S

Hashimoto, Y

Negami, T

Wada, T

机构：

[1] Matsushita Elect Ind Co Ltd, Adv Technol Res Labs, Seika, Kyoto 6190237, Japan

[2] Ryukoku Univ, Dept Chem Mat, Otsu, Shiga 5202194, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 67卷 / 1-4期

关键词：

MoSe2; ohmic; differential quantum efficiency; wide band gap;

D O I：

10.1016/S0927-0248(00)00283-X

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We investigated the electrical properties of the Cu(In,Ga)Se-2/MoSe2/Mo structure. CIGS/Mo heterocontact including the MoSe2 layer is not Schottky-type but a favorable ohmic-type contact by the evaluation of dark I-V measurement at low temperature. A characteristic peak at 870 nm is observed in differential quantum efficiency of a solar cell with a CIGS thickness of 0.5 mum. This peak is considered with relating to the absorption of the MoSe2 layer. The band gap of MoSe2 is calculated to be 1.41eV from the absorption peak. The band diagram is discussed on the basis of the electrical point of view. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：209 / 215

页数：7

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