Enhancement of photovoltage of dye-sensitized solid-state solar cells by introducing high-band-gap oxide layers

被引:53
作者
Bandara, J [1 ]
Weerasinghe, HC [1 ]
机构
[1] Inst Fundamental Studies, Dept Photochem, Kandy, Sri Lanka
关键词
dye sensitization; solid-state solar cell; TiO2; SrTiO3; ZnO; SnO2;
D O I
10.1016/j.solmat.2004.11.009
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Electrodes constructed using nanocrystalline TiO2 particulates for dye-sensitized solid-state solar cells (SS-DSSCs) showed open-circuit voltage (V-oc) in the 500-600 mV range, which is less than the theoretical expected value. Incorporation of high-band-gap semiconducting oxides with a flatband potential higher than TiO2, such as SrTiO3 or ZnO2 results in a dramatic increase in V-oc of SS-DSSC as compared to porous TiO2 nanocrystalline films. The observed photovoltage difference could be correlated to the difference in the flatband potential values of the respective oxides and shift of the flatband potentials of the oxide films. Hence, this method could be used to enhance the Voc and overall cell performance of SS-DSSC. (c) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:341 / 350
页数:10
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