Exciton region reflectance of homoepitaxial GaN layers

被引：148

作者：

Korona, KP ^{[1
]}

Wysmolek, A ^{[1
]}

Pakula, K ^{[1
]}

Stepniewski, R ^{[1
]}

Baranowski, JM ^{[1
]}

Grzegory, I ^{[1
]}

Lucznik, B ^{[1
]}

Wroblewski, M ^{[1
]}

Porowski, S ^{[1
]}

机构：

[1] POLISH ACAD SCI,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 06期

关键词：

D O I：

10.1063/1.117892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Reflection measurements in the exciton region of GaN homoepitaxial layers grown by metalorganic chemical vapor deposition (MOCVD) on GaN single crystals are reported. At low temperature (4.2 K) three free exciton lines have been found with energies; E(A) = 3.4776 eV, E(B) = 3.4827 eV, and E(C) = 3.502 eV. The spin-orbit parameter Delta(so) = 19.7 +/- 1.5 meV and the crystal field parameter Delta(cr) = 9.3 +/- 0.3 meV have been obtained. From temperature dependence of exciton spectra the energy gap dependence has been found: E(T) = E(0)-lambda[exp(beta/T)-1] (lambda = 0.121 eV, beta = 316 K). (C) 1996 American Institute of Physics.

引用

页码：788 / 790

页数：3

共 17 条

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