Role of plasma-aided manufacturing in semiconductor fabrication

被引：37

作者：

Hershkowitz, N ^{[1
]}

机构：

[1] Univ Wisconsin, Engn Res Ctr Plasma Aided Mfg, Madison, WI 53706 USA

来源：

IEEE TRANSACTIONS ON PLASMA SCIENCE | 1998年 / 26卷 / 06期

关键词：

D O I：

10.1109/27.747878

中图分类号：

O35 [流体力学]; O53 [等离子体物理学];

学科分类号：

070204 ; 080103 ; 080704 ;

摘要：

A brief review is presented of the application of plasma-aided manufacturing to semiconductor fabrication. Emphasis is placed on current state-of-the-art techniques for which plasma physics plays a significant role and on current problems that remain to be solved.

引用

页码：1610 / 1620

页数：11

共 84 条

[1] Tick size, spread, and volume
Ahn, HJ
Cao, CQ
Choe, H
[J]. JOURNAL OF FINANCIAL INTERMEDIATION, 1996, 5 (01) : 2 - 22
[2] Negative ion measurements and etching in a pulsed-power inductively coupled plasma in chlorine
Ahn, TH
Nakamura, K
Sugai, H
[J]. PLASMA SOURCES SCIENCE & TECHNOLOGY, 1996, 5 (02) : 139 - 144
[3] Spatially averaged (global) model of time modulated high density chlorine plasmas
Ashida, S
Lieberman, MA
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (02): : 854 - 861
[4] Bell CG, 1997, IEEE SPECTRUM, V34, P56
[5] Biolsi P, 1996, SOLID STATE TECHNOL, V39, P59
[6] Role of nitrogen in the downstream etching of silicon nitride
Blain, MG
Meisenheimer, TL
Stevens, JE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04): : 2151 - 2157
[7] BOBBIO SM, 1990, P SOC PHOTO-OPT INS, V1185, P262, DOI 10.1117/12.978065
[8] Helicons - The early years
Boswell, RW
Chen, FF
[J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1997, 25 (06) : 1229 - 1244
[9] Boulos M.I., 1994, THERMAL PLASMAS, V1
[10] Kinetic study of low energy ion-enhanced polysilicon etching using Cl, Cl-2, and Cl+ beam scattering
Chang, JP
Sawin, HH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (03): : 610 - 615

← 1 2 3 4 5 6 7 8 9 →