Theoretical investigations of adatom adsorptions on the As-stabilized GaAs(111)A surface

被引：5

作者：

Taguchi, A

Shiraishi, K

Ito, T

Kangawa, Y

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Mie Univ, Dept Engn Phys, Tsu, Mie 5148607, Japan

[3] Gakushuin Univ, Ctr Comp, Tokyo 1718588, Japan

来源：

SURFACE SCIENCE | 2001年 / 493卷 / 1-3期

关键词：

gallium arsenide; density functional calculations; growth; epitaxy; adatoms; molecular beam epitaxy;

D O I：

10.1016/S0039-6028(01)01209-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We investigated adsorptions of Ga and As atoms on the As-stabilized GaAs(111)A surface by using first-principles calculations. We found that a single As adatom does not occupy the As lattice site on the surface, but the As lattice site becomes active for an As adatom when the As adatom couples with Ga adatoms. This finding indicates that Ga has a self-surfactant effect on the As-stabilized surface. We also found that adatoms do not form stable microstructures on the As-stabilized surface. This is consistent with the reported experimental results that the layer-by-layer growth is difficult. We discuss epitaxial growth processes based on the calculation results. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：173 / 177

页数：5

共 10 条

[1]

AVEY AR, 1997, PHYS REV LETT, V79, P3938

[2] SILICON DOPING WITH MODULATED BEAM EPITAXY IN THE GROWTH OF GAAS(111)A [J].