Doping of GaN by ion implantation: Does it work?

被引：13

作者：

Suvkhanov, A ^{[1
]}

Hunn, J ^{[1
]}

Wu, W ^{[1
]}

Thomson, D ^{[1
]}

Price, K ^{[1
]}

Parikh, N ^{[1
]}

Irene, E ^{[1
]}

Davis, RF ^{[1
]}

Krasnobaev, L ^{[1
]}

机构：

[1] Univ N Carolina, Dept Phys & Astron, Chapel Hill, NC 27599 USA

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷

关键词：

D O I：

10.1557/PROC-512-475

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxially grown GaN by metal organic chemical vapor deposition (MOCVD) on SiC were implanted with 100 keV Si+ (for n-type) and 80 keV Mg+ (for p-type) with various fluences from 1x10(12) to 7x10(15) ions/cm(2) at liquid nitrogen temperature (LT), room temperature (RT), and 700 degrees C (HT). High temperature (1200 degrees C and 1500 degrees C) annealing was carried out after capping the GaN with epitaxial AIN by MOCVD to study damage recovery. Samples were capped by a layer of AIN in order to protect the GaN surface during annealing. Effects of implant temperature, damage and dopant activation are critically studied to evaluate a role of ion implantation in doping of GaN. The damage was studied by Rutherford Backscattering/Channeling, spectroscopic ellipsometry and photoluminescence. Results show dependence of radiation damage level on temperature of the substrate during implantation: implantations at elevated temperatures up to 550 degrees C decrease the lattice disorder; "hot implants" above 550 degrees C can not be useful in doping of GaN due to nitrogen loss from the surface. SE measurements have indicated very high sensitivity to the implantation damage. PL measurements at LT of 80 keV Mg+ (5x10(14) cm(-2)) implanted and annealed GaN showed two peaks : one similar to 100 meV and another similar to 140 meV away from the band edge.

引用

页码：475 / 480

页数：6