400mW 980nm-Module with very high Power Conversion Efficiency

被引：4

作者：

Schmidt, B ^{[1
]}

Pawlik, S ^{[1
]}

Rothfritz, H ^{[1
]}

Thies, A ^{[1
]}

Mordiek, S ^{[1
]}

Harder, C ^{[1
]}

机构：

[1] JDS Uniphase, CH-8045 Zurich, Switzerland

来源：

2000 IEEE 17TH INTERNATIONAL SEMICONDUCTOR LASER CONFERENCE, CONFERENCE DIGEST | 2000年

关键词：

D O I：

10.1109/ISLC.2000.882273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High reliable single mode high power laser diodes with an emission wavelength of around 980 nm are key elements for erbium doped fiber amplifiers (EDFA). The increasing demand for higher amplification power in future dense wavelength division multiplex (DWDM) systems forces the development of pump laser diodes with an operation power regime of 450 mW and more. In order to optimized the high power laser diode, the vertical far-field were reduced down to 17° while avoiding a reduction in power conversion efficiency and T0 as compared to laser diodes with more than 30° vertical far-field. The resulting excellent module properties are presented.

引用

页码：29 / 30

页数：2

共 3 条

[1] High-efficiency AlGaAs-based laser diode at 808 nm with large transverse spot size [J].