Effect of grain size on the properties of the CoFe-NiFe/NiMn top spin valve

被引:18
作者
Vas'ko, VA [1 ]
Kief, MT [1 ]
机构
[1] Seagate Technol, Recording Heads R&D, Minneapolis, MN 55435 USA
关键词
D O I
10.1063/1.1558098
中图分类号
O59 [应用物理学];
学科分类号
摘要
The top spin valve (TSV) of NiFe 60 Angstrom/CoFe 20Angstrom/Cu 29 Angstrom/CoFe 20Angstrom/NiFe 20A/NiMn 200 A has been deposited on a NiFeCr seed layer on a Si/SiO2 substrate using magnetron sputtering. After deposition, the samples were subjected to ex situ magnetic annealing at 270 degreesC to establish the pinning field of the CoFe-NiFe pinned layer. The structure, magnetic, and magnetoresistive properties of the TSV were characterized by x-ray diffraction (XRD) and magnetic and magnetotransport measurements. It was found that the grain size of the CoFe-NiFe and NiMn layers of the TSV, as determined from XRD using Scherrer's equation, can be controlled by changing the composition and thickness of the NiFeCr seed layer. It was also found that the grain size of the NiMn layer, and especially the CoFe-NiFe layer of the TSV, correlates with both the giant magnetoresistance (GMR) ratio (DeltaR/R-min) and pinning field of the CoFe-NiFe pinned layer. The GMR ratio increases from 3% to 12% and the pinning field decreases from 800 to 50 Oe as the CoFe-NiFe grain size increases from 90 to 210 Angstrom. (C) 2003 American Institute of Physics.
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页码:8409 / 8411
页数:3
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