Electronic structure of diatomic boron nitride

被引：47

作者：

Lorenz, M

Agreiter, J

Smith, AM

Bondybey, VE

机构：

来源：

JOURNAL OF CHEMICAL PHYSICS | 1996年 / 104卷 / 08期

关键词：

D O I：

10.1063/1.471079

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

BN molecules, isoelectronic with C-2, are produced by laser vaporization of boron nitride and trapped in solid neon. Through Fourier-transform absorption and laser-induced fluorescence spectra, three new electronic states are observed. Unlike C-2, BN has a triplet ground state (X (II)-I-3), but with an exceedingly low-lying singlet (a (1) Sigma(+)) state with 15 cm(-1)<T-e<182 cm(-1). (C) 1996 American Institute of Physics.

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页码：3143 / 3146

页数：4

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