Ferromagnetism in Mn-doped GaN: From clusters to crystals

被引:70
作者
Das, GR [1 ]
Rao, BK [1 ]
Jena, P [1 ]
机构
[1] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
关键词
D O I
10.1103/PhysRevB.68.035207
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The magnetic coupling between doped Mn atoms in clusters as well as crystals of GaN has been studied from first principles using molecular orbital theory for clusters and linearized muffin tin orbital-tight binding formulation for crystals. The calculations, based on density functional theory and the generalized gradient approximation for exchange and correlation, reveal the coupling to be ferromagnetic with a magnetic moment ranging from 2.0mu(B) to 4.0mu(B) per Mn atom depending on its environment. Mn atoms also tend to cluster and bind more strongly to N atoms than to Ga atoms. The significant binding of Mn to GaN clusters further indicates that it may be possible to increase the Mn concentration in GaN by using a porous substrate that offers substantial surface sites.
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页数:7
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