Nucleation and growth of nanoparticles during pulsed laser deposition in an ambient gas

被引：29

作者：

Wang, Y. L. ^{[1
]}

Chen, C. ^{[1
]}

Ding, X. C. ^{[1
]}

Chu, L. Z. ^{[1
]}

Deng, Z. C. ^{[1
]}

Liang, W. H. ^{[1
]}

Chen, J. Z. ^{[1
]}

Fu, G. S. ^{[1
]}

机构：

[1] Hebei Univ, Coll Phys Sci & Technol, Baoding 071002, Peoples R China

来源：

LASER AND PARTICLE BEAMS | 2011年 / 29卷 / 01期

关键词：

Nanoparticle; Nanoscale structure; Nucleation and growth; Nucleation region; Pulsed laser deposition; SI NANOPARTICLES; PROTON RADIOGRAPHY; GENERATED PLASMAS; ABLATION; SILICON; ACCELERATION; TARGET; BEAMS; FIELD; TIME;

D O I：

10.1017/S0263034611000048

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a method to determine where the nanoparticles nucleate and grow during pulsed laser deposition in an ambient gas. Briefly, nanocrystalline Si films are systemically deposited on the substrates located at a distance from the plasma and placed in horizontal direction; meanwhile an external electric field is introduced perpendicularly to the plume. Based on the transportation dynamics of Si nanoparticles corresponding to different electric fields, the lateral nucleation range of 0.1 to 33.8 mm is determined for Si nanoparticles deposited in 10 Pa Ar gas at a laser fluence of 4 J/cm(2). Further simulation of the mass and area density of Si nanoparticles demonstrates that both nucleation and growth probabilities in nucleation region are approximately Gauss-dependent of the lateral distance.

引用

页码：105 / 111

页数：7

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