A model calculation of the characteristic Raman modes in the tetrahedral network structures of GeSe2

被引：10

作者：

Inoue, K ^{[1
]}

Matsuda, O ^{[1
]}

Murase, K ^{[1
]}

机构：

[1] OSAKA UNIV, FAC SCI, DEPT PHYS, TOYONAKA, OSAKA 560, JAPAN

来源：

PHYSICA B-CONDENSED MATTER | 1996年 / 219-20卷

关键词：

D O I：

10.1016/0921-4526(95)00798-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The characteristic peaks, A at 211 and A* at 216 cm(-1), in the Raman spectra of layered crystalline GeSe2 have been studied by a model calculation using a valence force field and bond polarizability (VFF-BP). The A phonon is extended along the GeSe4 tetrahedral chain, while the A* phonon is quasi-localized at the edge-sharing GeSe4 tetrahedra. An extended VFF-BP model including interlayer interactions between Se atoms is proposed to understand the peculiar weakness of the A* Raman intensity.

引用

页码：520 / 522

页数：3

共 6 条

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