Crystallographic wet chemical etching of GaN

被引：195

作者：

Stocker, DA ^{[1
]}

Schubert, EF

Redwing, JM

机构：

[1] Boston Univ, Ctr Photon Res, Boston, MA 02215 USA

[2] Epitronics, Phoenix, AZ 85027 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 18期

关键词：

D O I：

10.1063/1.122543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate well-controlled crystallographic etching of wurtzite GaN grown on c-plane sapphire using H3PO4, molten KOH, KOH dissolved in ethylene glycol, and NaOH dissolved in ethylene glycol between 90 and 180 degrees C, with etch rates as high as 3.2 mu m/min. The crystallographic GaN etch planes are {0001}, {10(1) over bar 0}, {<10(11)over bar>}, {<10(12)over bar>}, and {10(1) over bar 0}. The vertical {10(1) over bar 0} planes appear perfectly smooth when viewed with a field- effect scanning electron microscope. The activation energy is 21 kcal/mol, indicative of reaction-rate limited etching. (C) 1998 American Institute of Physics. [S0003-6951(98)00741-4]

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页码：2654 / 2656

页数：3

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