Silicon based multilayer structures prepared by reactive pulsed laser deposition

被引：3

作者：

Ciach, R

Morgiel, J

Maziarz, W

Manoilov, EG

Kaganovich, EB

Svechnikov, SV

Sheregii, EM

机构：

[1] PAN, Inst Met & Mat Sci, PL-30059 Krakow, Poland

[2] UNAN, Inst Semicond Phys, UA-252650 Kiev, Ukraine

[3] Pedag Univ, Inst Phys, PL-35310 Rzeszow, Poland

来源：

THIN SOLID FILMS | 1998年 / 318卷 / 1-2期

关键词：

silicon; pulsed layer deposition; nanocrystalline;

D O I：

10.1016/S0040-6090(97)01156-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline-Si (nc-Si) films were prepared with reactive pulse laser deposition (during the deposition, oxygen or nitrogen gas was introduced into the chamber). The effect of the formation conditions on the optical and photoluminescence properties of films have been analysed. The electronography of cross-sections was performed by transmission electron microscope. It was concluded that pulsed laser deposition is a method to produce the Si low-dimensional material. (C) 1998 Elsevier Science S.A.

引用

页码：154 / 157

页数：4