Study of indium bumps for the ATLAS pixel detector

被引：23

作者：

Gemme, C

Fiorello, AM

Gagliardi, G

Gilchriese, M

Netchaeva, P

Rossi, L

Ruscino, E

Vernocchi, F

Varasi, M

机构：

[1] Univ Genoa, Dipartimento Fis, I-16146 Genoa, Italy

[2] Ist Nazl Fis Nucl, I-16146 Genoa, Italy

[3] Alenia Marconi Syst, Rome, Italy

[4] Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2001年 / 465卷 / 01期

关键词：

bump bonding; pixel detector;

D O I：

10.1016/S0168-9002(01)00390-4

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The bump-bonding technology is used to join the front-end read-out chips to the silicon substrate of the ATLAS pixel detector. We review the current status of the technology used by Alenia Marconi Systems and we report on the electrical and mechanical properties and the defect rate of the Indium bumps. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：200 / 203

页数：4