Growth of CeO2 thin films by metal-organic molecular beam epitaxy

被引：17

作者：

Ikegawa, S

Motoi, Y

机构：

[1] Advanced Research Laboratory, Toshiba Corporation, Kawasaki 210, 1, Komukai Toshiba-cho, Saiwai-ku

来源：

THIN SOLID FILMS | 1996年 / 281卷

关键词：

cerium; molecular beam epitaxy (MBE); oxidation; organometallic vapour deposition;

D O I：

10.1016/0040-6090(96)08575-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Epitaxial CeO2 films were successfully grown on SrTiO3(100) and SrTiO3(110) substrates by metal-organic molecular beam epitaxy. Tris(dipivaloymethanate)cerium (Ce(dpm)(3)) was sublimated outside the growth chamber and the gas flowed through a heated pipe and out of a nozzle. The distance between the nozzle and the substrate was shorter than the mean free path of a Ce(dpm)(3) molecule. Gaseous oxygen, activated by an electron cyclotron resonance (ECR) plasma, was supplied to the substrate. A stable growth rate of 0.5-2 layers min(-1) was obtained. This technique is compatible with other effusion cells and is suitable for layer-by-layer growth of complex oxides. Design considerations based on the kinetic theory of gas molecules and the oxidation conditions necessary for epitaxial growth are reported.

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页码：60 / 63

页数：4

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