Raman scattering anisotropy in a system of (1 1 0)-oriented silicon nanocrystals formed in a-Si film

被引：8

作者：

Efremov, MD ^{[1
]}

Bolotov, VV

Volodin, VA

Kochubei, SA

机构：

[1] Russian Acad Sci, Inst Semicond Phys, SB, Novosibirsk 630090, Russia

[2] RAS, Inst Sensor Microelect, SB, Omsk 644077, Russia

来源：

SOLID STATE COMMUNICATIONS | 1998年 / 108卷 / 09期

关键词：

nanostructures; laser processing; phase transitions; phonons; inelastic light scattering;

D O I：

10.1016/S0038-1098(98)00437-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Anisotropy of Raman scattering is observed in the system of silicon nanocrystals inside amorphous films. The observed anisotropy is established to be the result of planar correlated orientation of nanocrystals which have (1 1 0) orientation in the normal direction. Preferred orientation is proposed to be due to the deformation contribution in the process of nanocrystals formation under nanosecond laser impact. (C) 1998 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：645 / 648

页数：4

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