Piezoelectric doping and elastic strain relaxation in AlGaN-GaN heterostructure field effect transistors

被引：56

作者：

Bykhovski, AD ^{[1
]}

Gaska, R

Shur, MS

机构：

[1] Univ Virginia, Dept Elect Engn, Charlottesville, VA 22903 USA

[2] APA Opt Inc, Blaine, MN 55449 USA

[3] Rensselaer Polytech Inst, Dept ECSE, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 24期

关键词：

D O I：

10.1063/1.122829

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We calculate the sheet electron density induced by the piezoelectric effect in AlxGa1-xN-GaN heterostructure field effect transistors. This density is limited by the elastic strain relaxation, which depends on AlGaN barrier layer thickness and on the Al molar fraction in the barrier layer. Piezoelectric doping is more important in structures with larger Al content and thinner barrier layers. These results agree with our experimental data. (C) 1998 American Institute of Physics. [S0003-6951(98)03650-X].

引用

页码：3577 / 3579

页数：3

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