Coulomb blockade in silicon nano-pillars

被引：21

作者：

Pooley, DM

Ahmed, H

Mizuta, H

Nakazato, K

机构：

[1] Univ Cambridge, Cavendish Lab, Microelect Res Ctr, Cambridge CB3 0HE, England

[2] Univ Cambridge, Cavendish Lab, Hitachi Cambridge Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 15期

关键词：

D O I：

10.1063/1.123797

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the current-voltage characteristics of nano-pillars of polycrystalline silicon with two 2-3 nm thick silicon nitride tunnel barriers. Pillars with diameters between 45 and 100 nm showed a Coulomb blockade region and Coulomb staircase at 4.2 K. (C) 1999 American Institute of Physics. [S0003-6951(99)01515-6].

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页码：2191 / 2193

页数：3

相关论文

共 8 条

[1] THEORY OF SINGLE-ELECTRON CHARGING OF QUANTUM-WELLS AND DOTS [J].

AVERIN, DV ;

KOROTKOV, AN ;

LIKHAREV, KK .

PHYSICAL REVIEW B, 1991, 44 (12) :6199-6211

[2] Fabrication of silicon nanopillars containing polycrystalline silicon/insulator multilayer structures [J].

Fukuda, H ;

Hoyt, JL ;

McCord, MA ;

Pease, RFW .

APPLIED PHYSICS LETTERS, 1997, 70 (03) :333-335

[3]

Grabert H., 1992, Single Charge Tunneling

[4] Single-electron effects in heavily doped polycrystalline silicon nanowires [J].

Irvine, AC ;

Durrani, ZAK ;

Ahmed, H ;

Biesemans, S .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1113-1115

[5] Quantum mechanical effects in the silicon quantum dot in a single-electron transistor [J].

Ishikuro, H ;

Hiramoto, T .

APPLIED PHYSICS LETTERS, 1997, 71 (25) :3691-3693

[6]

SMITH RA, 1998, THESIS CAMBRIDGE U

[7] Shell filling and spin effects in a few electron quantum dot [J].

Tarucha, S ;

Austing, DG ;

Honda, T ;

vanderHage, RJ ;

Kouwenhoven, LP .

PHYSICAL REVIEW LETTERS, 1996, 77 (17) :3613-3616

[8] QUANTUM TRANSPORT IN POLYCRYSTALLINE SILICON SLIT NANO-WIRE [J].

WADA, Y ;

SUGA, M ;

KURE, T ;

YOSHIMURA, T ;

SUDO, Y ;

KOBAYASHI, T ;

GOTO, Y ;

KONDO, S .

APPLIED PHYSICS LETTERS, 1994, 65 (05) :624-626