Raman studies on phonon modes in cubic AlGaN alloy

被引：74

作者：

Harima, H ^{[1
]}

Inoue, T

Nakashima, S

Okumura, H

Ishida, Y

Yoshida, S

Koizumi, T

Grille, H

Bechstedt, F

机构：

[1] Osaka Univ, Dept Appl Phys, Osaka 5650871, Japan

[2] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

[3] Shibaura Inst Technol, Minato Ku, Tokyo 1080023, Japan

[4] Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.123289

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cubic AlxGa1-xN alloy layers have been successfully grown for x = 0 - 1 by gas-source molecular beam epitaxy on cubic-SiC/Si substrates, and the compositional dependence of the transverse-optic (TO) and longitudinal-optic (LO) phonon modes has been studied by Raman scattering. The LO-mode frequency of mixed crystals shows a systematic variation from the pure cubic AlN phase to the cubic GaN phase (one-mode type). On the contrary, there are two branches for the TO mode varying slowly in frequency with the composition (two-mode type). This behavior is explained within a random-element-isodisplacement model including the effect of polarization field. Our result indicates a strong polarization field acting on the cation-nitrogen bonds. (C) 1999 American Institute of Physics. [S0003-6951(99)03402-6].

引用

页码：191 / 193

页数：3

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