Cathodoluminescence of GaN doped with Sm and Ho

被引：36

作者：

Lozykowski, HJ ^{[1
]}

Jadwisienczak, WM

Brown, I

机构：

[1] Ohio Univ, Sch Elect Engn Comp Sci & Condensed Matter, Surface Sci Program, Stocker Ctr, Athens, OH 45701 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Berkeley, CA 94720 USA

[3] Nicholas Copernicus Univ, Lab Solid State Optoelect, Inst Phys, PL-87400 Torun, Poland

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 110卷 / 05期

关键词：

semiconductors; impurities in semiconductors; optical properties; luminescence;

D O I：

10.1016/S0038-1098(99)00077-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report the first observation of visible cathodoluminescence of the rare earth (RE) elements Sm, Ho implanted in GaN. The implanted samples were given isochronal thermal annealing treatments at a temperature of 1100 degrees C in N-2, at atmospheric pressure to recover implantation damages and activate the RE ions. The sharp characteristic emission lines corresponding to Sm3+ and Ho3+ intra-4f(n)-shell transitions are resolved in the spectral range from 400 to 1000 nm, and observed over the temperature range of 11-411 K. The cathodoluminescence emission is only weakly temperature dependent. The results indicate that RE doped GaN epilayers are suitable as a material for visible optoelectronic devices. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.

引用

页码：253 / 258

页数：6

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