Adhesion of benzocyclobutene-passivated silicon in epoxy layered structures

被引:62
作者
Hohlfelder, RJ
Maidenberg, DA
Dauskardt, RH
Wei, YG
Hutchinson, JW
机构
[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA
[2] Harvard Univ, Div Engn & Appl Sci, Cambridge, MA 02138 USA
基金
中国国家自然科学基金; 美国国家科学基金会;
关键词
D O I
10.1557/JMR.2001.0037
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Adhesion and subcritical debonding at interfaces between a silica-filled epoxy underfill and a silicon die passivated by silicon nitride and benzocyclobutene (BCB) layers were investigated. Adhesion was measured in terms of a critical value of the applied strain energy release rate, G (J/m(2)). Subcritical debond-growth rates in the range of 10(-9) to 10(-3) m/s:were characterized as a function of applied G. Adhesion and subcritical debonding were affected by changes in interfacial chemistry and environment. The surprisingly large effect of adjacent layer elastic properties on interfacial adhesion was demonstrated with simulations of interfacial fracture using a mechanics of materials approach, Interfacial chemistry was modified by using different adhesion promoters, by varying the BCB cure state, and by using different epoxy underfill resins. The effects of environmental variables were studied with temperature- and humidity-controlled environments in order to determine the separate roles of moisture activity and temperature.
引用
收藏
页码:243 / 255
页数:13
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